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Preliminary Preliminary
Product Description
Stanford Microdevices' NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.
NGA-386
DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
Small Signal Gain vs. Frequency
25 20 15
dB
10 5 0 0 1 2 3 4 5 6 7
Product Features * High Gain: 18.9dB at 1950Mhz * Cascadable 50 ohm: 1.2:1 VSWR * Patented GaAs HBT Technology * Operates from Single Supply * Low Thermal Resistance Package * Unconditionally Stable Applications * Cellular, PCS, CDPD * Wireless Data, SONET
Frequency GHz
Parameters: Test Conditions: Z0 = 50 Ohms, ID = 35 mA, T = 25C Output Power at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz
Symbol
Units dBm dBm dBm dBm dBm dBm dB dB dB MHz f = DC - 5000 MHz f = DC - 5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 2000 MHz dB dB dB dB V C/W
Min.
Typ. 14.5 15.0 15.6 25.8 27.0 27.0 20.9 18.9 18.0 2000 1.2:1 1.3:1 23.4 22.2 21.6 2.7 4.0 144
Max.
P1dB
IP3
Third Order Intercept Point Power out per tone = 0 dBm
S21 Bandwidth S11 S22 S12 NF VD Rth, j-l
Small Signal Gain 3dB Bandwidth Input VSWR Output VSWR Reverse Isolation Noise Figure Device Voltage Thermal Resistance (junction - lead)
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
1
Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Parameter Supply Current Device Voltage Operating Temperature Maximum Input Power Storage Temperature Range Operating Junction Temperature Value 90 6.0 -40 to +85 +10 -40 to +150 +150 Unit mA V C dBm C C
Key parameters, at typical operating frequencies:
Parameter 500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation Typical 25C 21.3 25.1 14.6 26.8 23.6 20.9 25.8 14.5 24.8 23.4 18.9 27.0 15.0 22.0 22.2 18.0 27.0 15.6 21.0 21.6 Test Condition Unit dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB
(ID = 35mA, unless otherwise noted)
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
2
Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Same as Pin 2. Device Schematic
2
GND
3
RF OUT/ BIAS
4
GND
Application Schematic for Operation at 850 MHz
R ecommended B ias R esistor Values Supply Voltage(Vs) Rbi as (Ohms) 5V 30 8V 120 9V 150 12V
1uF
240
68pF
R bias Vs
For 9V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended.
33nH
50 ohm microstrip
2 1 3 100pF 4 100pF
50 ohm microstrip
Application Schematic for Operation at 1950 MHz
1uF 22pF R bias Vs
22nH
50 ohm microstrip
2 1 3 68pF 4 68pF
50 ohm microstrip
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
3
Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25C
S21, ID =35mA, T=25C
S12, ID =35mA, T=25C
25 20 15
dB
0 -5 -10
dB -15
10 5 0 0 1 2 3 4 5 6 7
Frequency GHz S11, ID =35mA, T=25C
-20 -25 -30 0 1 2 3 4 5 6 7
Frequency GHz S22, ID =35mA, T=25C
0 -5 -10
dB -15 dB
0 -5 -10 -15 -20 -25 -30
0 1 2 3 4 5 6 7
-20 -25 -30
Frequency GHz
0
1
2
3
4
5
6
7
Frequency GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
4
Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Typical S-Parameters, ID = 35mA ( No external matching, de-embedded to device leads)
S11 Freq GHz 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.50 5.00 5.50 6.00 6.50 7.00 mag 0.038 0.032 0.034 0.037 0.042 0.046 0.048 0.051 0.057 0.058 0.061 0.064 0.066 0.068 0.072 0.073 0.074 0.075 0.079 0.080 0.081 0.085 0.090 0.096 0.105 0.113 0.124 0.136 0.146 0.158 0.174 0.215 0.246 0.284 0.319 0.353 0.386 Ang 180 172 156 147 136 130 123 118 115 111 108 104 101 99 99 96 93 93 93 92 91 91 92 94 97 100 102 103 104 105 107 105 103 101 97 92 87 dB 21.7 21.6 21.5 21.5 21.4 21.3 21.2 21.1 21.0 20.8 20.7 20.5 20.3 20.2 20.0 19.8 19.6 19.4 19.2 19.0 18.8 18.4 18.0 17.6 17.2 16.8 16.4 16.0 15.6 15.2 14.9 14.1 13.3 12.6 11.8 11.1 10.5 S21 mag 12.126 12.024 11.923 11.854 11.760 11.656 11.489 11.340 11.163 11.020 10.818 10.589 10.371 10.220 10.012 9.750 9.514 9.367 9.129 8.907 8.682 8.321 7.899 7.581 7.217 6.916 6.643 6.289 6.006 5.735 5.542 5.041 4.641 4.251 3.903 3.599 3.364 Ang 178 176 171 167 162 158 154 150 145 142 138 134 130 127 123 119 115 113 109 106 103 97 91 86 80 75 71 65 61 57 53 42 31 21 12 3 -6 dB -23.6 -23.7 -23.7 -23.7 -23.7 -23.6 -23.6 -23.5 -23.4 -23.4 -23.3 -23.2 -23.1 -23.0 -22.9 -22.8 -22.6 -22.5 -22.4 -22.2 -22.1 -21.9 -21.6 -21.4 -21.1 -20.8 -20.6 -20.3 -20.1 -19.9 -19.7 -19.1 -18.6 -18.3 -18.0 -17.7 -17.4 S12 mag 0.066 0.066 0.065 0.065 0.066 0.066 0.066 0.067 0.067 0.068 0.068 0.069 0.070 0.071 0.072 0.073 0.074 0.075 0.076 0.077 0.078 0.081 0.083 0.086 0.089 0.091 0.093 0.096 0.099 0.101 0.104 0.111 0.117 0.122 0.126 0.130 0.135 Ang 0 1 2 2 3 4 5 5 6 6 7 7 8 9 9 9 9 10 10 10 10 10 10 10 9 9 8 7 7 5 5 1 -2 -7 -11 -14 -19 mag 0.054 0.055 0.057 0.059 0.062 0.066 0.070 0.073 0.079 0.082 0.089 0.095 0.101 0.105 0.112 0.119 0.126 0.131 0.139 0.146 0.154 0.170 0.188 0.205 0.224 0.241 0.258 0.278 0.293 0.309 0.318 0.353 0.402 0.445 0.475 0.503 0.534 S22 Ang -180 -179 -177 -174 -174 -173 -174 -173 -175 -176 -177 -178 -180 179 177 175 173 171 169 167 164 160 154 149 144 140 136 132 128 124 122 117 111 103 97 91 84
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
5
Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number NGA-386 Reel Size 7" Devices/Reel 1000
Part Symbolization The part will be symbolized with a "N3" designator on the top surface of the package.
Package Dimensions
N3
PCB Pad Layout
N3
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
6
Preliminary Preliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Component Tape and Reel Packaging
Tape Dimensions For 86 Outline
DESCRIPTION
Cavity Length Width Socket Depth Pitch Bottom Hole diameter Diameter Pitch Position Width Tape Thickness
SYMBOL
A B H K P D1 Do Po E C t W T F P2
SIZE (MM)
6.10 0.10 6.20 0.10 3.10 0.10 2.00 0.10 8.00 0.10 1.50 min. 1.50 0.10 4.00 0.10 1.75 0.10 9.10 0.25 0.05 0.01 12.00 0.30 0.30 0.05 5.50 0.05 2.00 0.05
Perforation
Cover Tape
Carrier Tape Width Tape Thickness Distance Cavity to Perforation (Width Direction) Cavity to Perforation (Length Direction)
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101103 Rev C
7

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